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| MITSUBISHI SEMICONDUCTOR MGFC41V7177 7.1 - 7.7GHz BAND 12W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC41V7177 is an internally impedence matched GaAs power FET especially designed for use in 7.1 - 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high raliability. OUTLINE DRAWING 24+ /-0.3 R1.25 (1) Unit: millimeters (inches) FEATURES Internally matched to 50ohm system High output power P1dB = 12W (TIP.) @ f=7.1 - 7.7 Hz High power gain GLP = 9.5 dB (TYP.) @ f=7.1 - 7.7 GHz High power added efficiency Eadd = 33 % (TYP.) @ f=7.1 - 7.7 GHz Low Distortion[Item-51] IM3=-45 dBc(TYP.)@Po=30dBm S.C.L. 2 MIN 0.6+/-0.15 R1.2 1 7 .4 +/-0 .3 8 .0 + /-0 .2 (2) 2 MIN (3) 20.4+ /-0.2 APPLICATION 7.1 - 7.7GHz band amplifiers QUALITY GRADE IG 4 .0 + /-0 .4 RECOMMENDED BIAS CONDITIONS VDS = 10V ID = 3.4 A Rg = 50(ohm) 1 .4 Refer to Bias Procedure GF-18 (1): GATE (2): SOURCE (FLANGE) (3): DRAIN ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID IGR IGF PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation *1 Channel temperature Storage temperature Ratings -15 -15 12 -30 63 53.6 175 -65 to +175 Unit V V A mA mA W DegreesC DegreesC *1 : Tc=25 DegreesC ABSOLUTE MAXIMUM RATINGS Symbol IDSS gm VGS(off) P1dB GLP Eadd IM3 *2 Rth(ch-c) Parameter Saturated drain current Transconductance Gate to source cut-off voltage Output power at 1dB gain compression Linear power gain Power added efficiency 3rd order IM distortion Thermal resistance *1 Delta Vf method Test conditions Min VDS = 3V , VGS = 0V VDS = 3V , ID = 3.0A VDS = 3V , ID = 30mA 40 VDS = 10V , ID = 3.4A , f = 7.1 - 7.7 GHz 7 -42 Limits Typ 3 41 8 30 -45 Max 12 -5 2.8 A S V dBm dB % dBc C/W Unit *1 : Channel to case *2 : Item-51,2tone test,Po=30dBm Single Carrier Level,f=7.7GHz,Delta f=10MHz MITSUBISHI ELECTRIC 0 .1 2 .4 + /-0 .2 13.4 1 5 .8 MITSUBISHI SEMICONDUCTOR MGFC41V7177 7.1 - 7.7GHz BAND 12W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS 43 P1dB,GLP vs. Freq. VDS=10V UDS=3.4A P1dB 41 14 18 Po , P.A.E. vs. Pin 45 VDS=10V IDS=3.4A f=7.4GHz Po 35 60 100 40 Output power P1dB (dBm) Output power Po (dBm) 80 40 12 30 P.A. E 40 39 GLP 38 10 8 25 20 37 7.0 7.1 7.2 7.3 7.4 7.5 7.6 Frequency (GHz) 7.7 7.8 6 20 15 20 25 30 35 Input power Pin (dBm) 40 0 Po,IM3 vs. Pin 36 VDS=10V IDS=3.4A F1=7.70GHz f2=7.71GHz 2-tone test 0 Output power Po (dBm S.C.L.) 34 -10 Po -20 IM3 (dBc) 32 30 IM3 28 -30 -40 26 -50 24 15 17 19 21 23 25 27 Input power Pin (dBm S.C.L.) 29 -60 S parameters ( Ta=25deg.C , VDS=10(V),IDS=3.4(A) ) S-Parameter (TYP.) S21 S12 Angle(deg) Magn. Angle(deg) -131.000 0.066 172.000 -146.000 0.073 160.000 -161.000 0.079 146.000 -177.000 0.085 133.000 167.000 0.092 118.000 149.000 0.094 103.000 131.000 0.097 86.000 f (GHz) 7.10 7.20 7.30 7.40 7.50 7.60 7.70 Magn. 0.510 0.450 0.380 0.290 0.180 0.060 0.130 S11 Angle(deg) 66.000 57.000 48.000 40.000 34.000 59.000 146.000 Magn. 2.600 2.600 2.640 2.650 2.670 2.640 2.570 Magn. 0.220 0.220 0.220 0.210 0.180 0.130 0.070 S22 Angle(deg) 106.000 89.000 71.000 53.000 38.000 20.000 -13.000 Oct-01 MITSUBISHI ELECTRIC Power added efficiency P.A.E. (%) 42 16 MITSUBISHI SEMICONDUCTOR MGFC41V7177 7.1 - 7.7GHz BAND 12W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC |
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